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HSChapter 85
U.S. imports of memory integrated circuits (HS 854232) totaled $622.5M in April 2026, traded with 45 countries.
Importers of Memory Integrated Circuits paid $5.0M in duties in April 2026 — an effective duty rate of 34% on $14.8M in dutiable value, based on actual customs collections rather than the published tariff schedule. Memory Integrated Circuits imports of $622.5M in April 2026 ran 49% above the year-to-date monthly average of $416.9M.
Last updated: April 2026 dataDRAM, SRAM, EEPROM, EPROM, and other memory ICs are classified here, with the US tariff schedule subdividing DRAM by capacity thresholds ranging from 128 MB and below up to over 1 GB — distinctions that reflect successive generations of memory technology. Taiwan and South Korea are the dominant suppliers, with the latter home to the world's largest DRAM and NAND flash producers; Japan and Malaysia round out the top sources. Antidumping and countervailing duty orders have historically targeted certain memory products, so importers should verify whether any active orders cover the specific memory type and origin before entry. The breadth of lines under this heading means that capacity specifications on commercial invoices must be precise to avoid misclassification.
AI-written summary of the official U.S. Census Bureau trade figures on this page — verify before relying on it.
CBP requires the memory capacity per chip (in MB or GB) to assign the correct 10-digit line. Commercial invoices should state the capacity, memory type (DRAM, SRAM, etc.), and part number for each SKU. Mixed-capacity shipments must be entered on separate lines corresponding to each capacity band. Manufacturer datasheets or product specifications should be retained as supporting documentation.
Yes, antidumping duty orders have been imposed on certain DRAM and other memory products in past trade cases. Importers should search the USITC and Commerce Department's antidumping/countervailing duty order database by HTS code and country of origin before each shipment, as orders can be revoked, modified, or reinstated through sunset reviews. Working with a licensed customs broker familiar with semiconductor trade remedies is advisable for high-volume memory imports.
Monthly import values over time
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| Country | Imports | Exports | Balance |
|---|---|---|---|
| KOREA, SOUTH | $303.9M | $3.8M | -$300.1M |
| TAIWAN | $178.0M | $58.5M | -$119.5M |
| HONG KONG | $575K | $85.9M | +$85.3M |
| JAPAN | $58.9M | $3.0M | -$55.9M |
| MEXICO | $74K | $48.6M | +$48.5M |
HS10 import codes under this HS6 parent. Source: U.S. Harmonized Tariff Schedule.
| Code | Description | Import Value | Effective Tariff % | Duty Collected |
|---|---|---|---|---|
| 8542320071 | ELEC INTEGRATED CIRCUITS, MEMORY, NESOI | $318.1M | 33.58% | $1.9M |
| 8542320036 | DRAM OVER 1 GB | $164.7M | 39.96% | $1.3M |
| 8542320051 | ELECTRICALLY ERASABLE PROGRMBLE READ-ONLY MEMORY | $87.5M | 31.61% | $928K |
| 8542320032 | DRAM GT 512MB LT=1GB | $36.4M | 47.57% | $189K |
| 8542320041 | STATIC READ-WRITE RANDOM ACCESS (SRAM) | $5.8M | 22.14% | $309K |
| 8542320002 | DYNAMIC READ-WRITE RANDOM ACCESS MEMORY LT=128 MB | $4.7M | 49.55% | $93K |
| 8542320028 | DRAM GT 256 LT=512MB | $3.7M | 40.50% | $50K |
| 8542320024 | DYNAMIC READ-WRITE RANDOM ACCESS GT 128 LT=256MB | $1.3M | 40.29% | $69K |
| 8542320061 | ELECTRIC INTEGRATED CIRCUITS, (EPROM) NT ELEC PROG | $319K | 10.00% | $42K |
ELEC INTEGRATED CIRCUITS, MEMORY, NESOI
DRAM OVER 1 GB
ELECTRICALLY ERASABLE PROGRMBLE READ-ONLY MEMORY
DRAM GT 512MB LT=1GB
STATIC READ-WRITE RANDOM ACCESS (SRAM)
DYNAMIC READ-WRITE RANDOM ACCESS MEMORY LT=128 MB
DRAM GT 256 LT=512MB
DYNAMIC READ-WRITE RANDOM ACCESS GT 128 LT=256MB
ELECTRIC INTEGRATED CIRCUITS, (EPROM) NT ELEC PROG
HS10 export codes under this HS6 parent. Source: U.S. Schedule B export classification.
| Code | Description | Export Value |
|---|---|---|
| 8542320023 | DRAM OVER 1 GB | $111.4M |
| 8542320070 | ELEC INTEGRATED CIRCUITS, MEMORY, NESOI | $85.7M |
| 8542320050 | ELECTRICALLY ERASABLE PROGRMBLE READ-ONLY MEMORY | $55.8M |
| 8542320040 | STATIC READ-WRITE RANDOM ACCESS (SRAM) | $26.4M |
| 8542320015 | ELEC IC, MEM, DYNAMIC READ/WRITE, NT OVR 1 GB | $25.1M |
| 8542320060 | ELECTRIC INTEGRATED CIRCUITS, (EPROM) NT ELEC PROG | $14.0M |
DRAM OVER 1 GB
34.2M no
ELEC INTEGRATED CIRCUITS, MEMORY, NESOI
5.4M no
ELECTRICALLY ERASABLE PROGRMBLE READ-ONLY MEMORY
46.8M no
STATIC READ-WRITE RANDOM ACCESS (SRAM)
1.7M no
ELEC IC, MEM, DYNAMIC READ/WRITE, NT OVR 1 GB
11.3M no
ELECTRIC INTEGRATED CIRCUITS, (EPROM) NT ELEC PROG
3.3M no
STATIC CONVERTERS; ADP POWER SUPPLIES
HS 850440
| State | Imports | Exports | Balance |
|---|---|---|---|
| California | $241.3M | $82.7M | -$158.6M |
| Nevada | $132.8M | $3.7M | -$129.1M |
| Arizona | $57.8M | $22.6M | -$35.3M |
| Port | Imports | Exports | Balance |
|---|---|---|---|
| SAN FRANCISCO INTERNATIONAL AIRPORT, CA | $196.3M | $49.9M | -$146.4M |
| ANCHORAGE, AK | $151.7M | $40.8M | -$110.9M |
| LOS ANGELES INTERNATIONAL AIRPORT, CA | $124.3M | $20.4M | -$104.0M |